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[AMPS] Excess hfe and ft

To: <amps@contesting.com>
Subject: [AMPS] Excess hfe and ft
From: jono@webspun.com (Jon Ogden)
Date: Fri, 22 May 98 20:14:57 -0500
>These are really taking the place in new RF power designs for UHF, that
>used to be bipolar...... The advantage of laterally diffused MOSFETS is that 
the
>insulator layer on the bottom to isolate conventional power MOS drain,
>which presented capacitance to ground. 

>From what I understand though their biggest disadvantage is efficiency.  
>From what I have heard LDMOS are less efficient than their bipolar 
cousins.

73,

Jon
KE9NA




-------------------------------------
Jon Ogden
KE9NA

http://www.qsl.net/ke9na


"A life lived in fear is a life half lived."


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