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References: [ +subject:/^(?:^\s*(re|sv|fwd|fw)[\[\]\d]*[:>-]+\s*)*\[Amps\]\s+LDMOSFET\s+questions\s+for\s+insiders\s*$/: 9 ]

Total 9 documents matching your query.

1. [Amps] LDMOSFET questions for insiders (score: 1)
Author: Manfred Mornhinweg <manfred@ludens.cl>
Date: Sat, 17 Nov 2018 18:48:09 +0000
Hello, is there anyone on this forum who knows LDMOSFETs really well and could answer a few questions? My questions refer to a high power device like the BLF188XR or the MRF1K50N, operating in a broa
/archives//html/Amps/2018-11/msg00057.html (8,616 bytes)

2. Re: [Amps] LDMOSFET questions for insiders (score: 1)
Author: "Doug Ronald" <doug@dougronald.com>
Date: Sat, 17 Nov 2018 14:25:13 -0800
This app note gives some information on repetitive avalanche ruggedness and unclamped inductive switching which may help... https://assets.nexperia.com/documents/application-note/AN10273.pdf W6DSR He
/archives//html/Amps/2018-11/msg00060.html (9,514 bytes)

3. Re: [Amps] LDMOSFET questions for insiders (score: 1)
Author: Manfred Mornhinweg <manfred@ludens.cl>
Date: Mon, 19 Nov 2018 14:07:42 +0000
Doug, thanks for that link. What I take home from reading it is that I should expect a somewhat reduced total dissipation capability when avalanching is involved. But doubts remain as to whether that
/archives//html/Amps/2018-11/msg00065.html (8,578 bytes)

4. Re: [Amps] LDMOSFET questions for insiders (score: 1)
Author: "Doug Ronald" <doug@dougronald.com>
Date: Tue, 20 Nov 2018 10:57:03 -0800
Ampleon has published on the topic, and is one of the few semiconductor companies who specify their avalanche energy at least for the BLF188XR LDMOS dual. They still use the UIS test which demonstrat
/archives//html/Amps/2018-11/msg00069.html (9,950 bytes)

5. Re: [Amps] LDMOSFET questions for insiders (score: 1)
Author: jeff millar <wa1hco@wa1hco.net>
Date: Wed, 21 Nov 2018 20:35:44 -0500
Here are some things I think I know. The voltage rating is high enough to handle 100% reflected with any phase angle in 20% duty cycle pulse operation. Effectively, as long as the High SWR trip can o
/archives//html/Amps/2018-11/msg00074.html (11,899 bytes)

6. Re: [Amps] LDMOSFET questions for insiders (score: 1)
Author: Manfred Mornhinweg <manfred@ludens.cl>
Date: Fri, 23 Nov 2018 21:48:12 +0000
Doug, Jeff, Ampleon has published on the topic, and is one of the few semiconductor companies who specify their avalanche energy at least for the BLF188XR LDMOS dual. They still use the UIS test whic
/archives//html/Amps/2018-11/msg00075.html (21,400 bytes)

7. Re: [Amps] LDMOSFET questions for insiders (score: 1)
Author: Daniel Artaud F6BRD via Amps <amps@contesting.com>
Date: Sun, 2 Dec 2018 16:26:50 +0100
Manfred, Your project is a great task, congratulations. During more than 40 years working in the RF world I always heard about transistors failing. But for now, reliability has increased to a reasona
/archives//html/Amps/2018-12/msg00001.html (28,385 bytes)

8. Re: [Amps] LDMOSFET questions for insiders (score: 1)
Author: Manfred Mornhinweg <manfred@ludens.cl>
Date: Tue, 04 Dec 2018 16:28:29 +0000
Daniel, thanks for all your input and links! It has kept me busy and learning for two days. Your project is a great task, congratulations. I just hope I can ever bring it to a successful end! The mai
/archives//html/Amps/2018-12/msg00022.html (27,954 bytes)

9. Re: [Amps] LDMOSFET questions for insiders (score: 1)
Author: Daniel Artaud F6BRD via Amps <amps@contesting.com>
Date: Sun, 9 Dec 2018 22:01:38 +0100
Le 04/12/2018 à 17:28, Manfred Mornhinweg a écrit : Daniel, thanks for all your input and links! It has kept me busy and learning for two days. Your project is a great task, congratulations. I just h
/archives//html/Amps/2018-12/msg00067.html (32,628 bytes)


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