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1. [Amps] testing RF power MOSFET devices (score: 1): Author: Dan Sawyer <dansawyer@earthlink.net>; Date: Sun, 22 Feb 2009 19:59:28 -0800; This is a general question regarding 'testing' RF power MOSFETs 1. There appears to be a difference between the MRF150 and the ST equivalent based on the 'simple' test of placing the negative lead of; /archives//html/Amps/2009-02/msg00654.html (7,547 bytes)
2. Re: [Amps] testing RF power MOSFET devices (score: 1): Author: "Alex Eban" <alexeban@gmail.com>; Date: Mon, 23 Feb 2009 10:29:35 +0200; 1 and 2 are correlated: the 2Megs. Reading indicates that there is a leakage path from gate to ground. The charge impressed on the gate leaks through it and causes a gradual turn off of the transisto; /archives//html/Amps/2009-02/msg00656.html (8,842 bytes)

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