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References: [ +subject:/^(?:^\s*(re|sv|fwd|fw)[\[\]\d]*[:>-]+\s*)*\[Amps\]\s+New\s+NXP\s+BLF578XR\s+1200W\s+LDMOS\s+FET\s+is\s+\"indestructible\"\s*$/: 39 ]

Total 39 documents matching your query.

1. [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: Mike Tubby <mike@tubby.org>
Date: Fri, 22 Jul 2011 11:22:06 +0100
All, I thought I should mention that NXP have just announced a new version of the BLF578 1200W 50V LDMOS FET called the BLF578XR (Extremely Rugged) which is claimed to be "indestructible". http://www
/archives//html/Amps/2011-07/msg00251.html (8,014 bytes)

2. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: "Phil Clements" <philc@texascellnet.com>
Date: Fri, 22 Jul 2011 06:22:08 -0500
Who will be the first to put a pair of these on the air covering 30-6 meters @ legal-limit "brick-on-the-key" output? (((73))) Phil, K5PC All, I thought I should mention that NXP have just announced
/archives//html/Amps/2011-07/msg00252.html (8,450 bytes)

3. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: Pete Smith <n4zr@contesting.com>
Date: Fri, 22 Jul 2011 09:41:37 -0400
I wonder why 10 MHz is the lower limit? 73, Pete N4ZR The World Contest Station Database, updated daily at www.conteststations.com The Reverse Beacon Network at http://reversebeacon.net, blog at reve
/archives//html/Amps/2011-07/msg00253.html (9,808 bytes)

4. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: MIKE DURKIN <patriot121@msn.com>
Date: Fri, 22 Jul 2011 07:37:51 -0700
And no price .... I would still try it at 160m ... _______________________________________________ Amps mailing list Amps@contesting.com http://lists.contesting.com/mailman/listinfo/amps
/archives//html/Amps/2011-07/msg00254.html (11,489 bytes)

5. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: Bert Almemo <balmemo@sympatico.ca>
Date: Fri, 22 Jul 2011 10:49:35 -0400
In another NXP video I watched they mentioned 1 MHz. Great transistor. 73 Bert, VE3NR I wonder why 10 MHz is the lower limit? 73, Pete N4ZR The World Contest Station Database, updated daily at www.co
/archives//html/Amps/2011-07/msg00255.html (10,780 bytes)

6. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: "Randall, Randy" <Randy.Randall@uchealth.com>
Date: Fri, 22 Jul 2011 11:36:08 -0400
Since most power RF transistors will blow if you even look at them incorrectly, and a tough device adds a lot of value and eliminates some of the required protection devices I'd venture that the pric
/archives//html/Amps/2011-07/msg00256.html (13,639 bytes)

7. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: "John D'Ausilio" <jdausilio@gmail.com>
Date: Fri, 22 Jul 2011 11:42:12 -0400
They're around $300 or so for the non-XR version these days, I've heard the XR is a couple hundred more .. I'm sure they'll continue to drop in price, they're heavily used in broadcast industry .. de
/archives//html/Amps/2011-07/msg00257.html (13,005 bytes)

8. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: Al Kozakiewicz <akozak@hourglass.com>
Date: Fri, 22 Jul 2011 11:50:15 -0400
Perhaps, but part of what keeps an RF vacuum tube price high is the amount of skilled labor required to assemble and test it. Even if the value proposition was zero, the incremental manufacturing cos
/archives//html/Amps/2011-07/msg00258.html (14,487 bytes)

9. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: Ron Youvan <ka4inm@tampabay.rr.com>
Date: Fri, 22 Jul 2011 12:04:59 -0400
I suspect the "device" is ordinary, it is the "built-in protective circuit" that protects it and has that low frequency limit. (tiny torus core) Reflected power reduces drive internally. -- Ron KA4IN
/archives//html/Amps/2011-07/msg00259.html (9,663 bytes)

10. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: W2XJ <w2xj@nyc.rr.com>
Date: Fri, 22 Jul 2011 12:15:31 -0400
If the device is operated as a class T amplifier, the lower practical frequency limit would be around 40 kilohertz or less. _______________________________________________ Amps mailing list Amps@cont
/archives//html/Amps/2011-07/msg00260.html (9,787 bytes)

11. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: jim feldman <mtnredhed@gmail.com>
Date: Fri, 22 Jul 2011 09:18:00 -0700
http://cache.freescale.com/files/rf_if/doc/data_sheet/MRFE6VP61K25H.pdf Freescale's 1.2kw ruggedized part. Youtube has some amusing vids of them being abused too. https://www.youtube.com/watch?v=KZF-
/archives//html/Amps/2011-07/msg00261.html (9,404 bytes)

12. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: Manfred Mornhinweg <manfred@ludens.cl>
Date: Fri, 22 Jul 2011 16:56:05 +0000
Well, I know a guy who is surely able to destroy even that transistor! ;-) A transistor like this one, packing so much power into a single (and rather small) package, is extremely hard to cool adequ
/archives//html/Amps/2011-07/msg00262.html (10,903 bytes)

13. [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: "Baruch Zilbershatz" <4z4rb@bezeqint.net>
Date: Fri, 22 Jul 2011 19:55:09 +0300
I made an amp with these Single unit with a single device You can arc weld with it!! 4z4rb Baruch Zilbershatz Nitzanay-Oz 118 Nitzanay -Oz 42836 ISRAEL phone: (+)972-052 8753838 _____________________
/archives//html/Amps/2011-07/msg00263.html (8,425 bytes)

14. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: Paul Decker <kg7hf@comcast.net>
Date: Fri, 22 Jul 2011 20:16:12 +0000 (UTC)
  Over the years I've heard many people say that adequately cooling a transistor is difficult because it is so small.  It's really difficult for me to wrap my brain around that statement though after
/archives//html/Amps/2011-07/msg00265.html (9,774 bytes)

15. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: Al Kozakiewicz <akozak@hourglass.com>
Date: Fri, 22 Jul 2011 16:32:13 -0400
The anode cooler is welded to the outside of the anode. The ceramic is just an insulator that isolates the anode from the socket and does not much factor into cooling the tube. I have an 8877 in my h
/archives//html/Amps/2011-07/msg00266.html (10,616 bytes)

16. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: Paul Decker <kg7hf@comcast.net>
Date: Fri, 22 Jul 2011 22:07:33 +0000 (UTC)
Well that is exactly my point.  I think with power mosfets, the drain is usually part of the outside package.  The physical parts of the tube is small, the cooler is just an external part.  case and
/archives//html/Amps/2011-07/msg00268.html (11,368 bytes)

17. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: "Phil Clements" <philc@texascellnet.com>
Date: Fri, 22 Jul 2011 17:56:59 -0500
Now for the big question about the elephant in the room....how much did the device cost you? Phil, K5PC I made an amp with these Single unit with a single device You can arc weld with it!! 4z4rb Baru
/archives//html/Amps/2011-07/msg00269.html (9,459 bytes)

18. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: "Baruch Zilbershatz" <4z4rb@bezeqint.net>
Date: Sat, 23 Jul 2011 02:58:52 +0300
Igot 4 devices 2 were 578XR and two had no printing at all on. Got them as samples so I have no idea about price sorry. As far as I can say this device needs cooling. But all that scary talk about su
/archives//html/Amps/2011-07/msg00270.html (10,042 bytes)

19. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: Al Kozakiewicz <akozak@hourglass.com>
Date: Fri, 22 Jul 2011 21:36:50 -0400
With an external anode tube (and I'll use the 8877 as an example because I have one close at hand), a plate dissipation of 1500W is spread over the anode. Without the cooler, that's still about 12.5
/archives//html/Amps/2011-07/msg00271.html (13,343 bytes)

20. Re: [Amps] New NXP BLF578XR 1200W LDMOS FET is "indestructible" (score: 1)
Author: Al Kozakiewicz <akozak@hourglass.com>
Date: Fri, 22 Jul 2011 21:55:14 -0400
That penultimate sentence should read the drain LEAD is not an active element. Of course the drain is. But the actual drain where all the electrical action happens is on the silicon. The lead is an e
/archives//html/Amps/2011-07/msg00272.html (13,938 bytes)


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