DR. GERALD N. JOHNSON
DEAR SIR,
I WAS READING YOUR ARTICLE ON (TENTEC)40823 MOSFET.
I UNDERSTAND YOU ARE AN AUTHORITY ON MOSFETS AND WOULD APPRECIATE YOUR HELP IN
IDENTIFYING A SUITABLE SOURCE FOR THE FOLLOWING. PLEASE REVIEW THE SAME AND
ADVISE ME IF THIS MODIFICATION IS POSSIBLE.
1. 3N200 2500 NOS (ANY MAKE)
THIS IS A FET SILICON N CHANNEL TRANSISTOR
AND NEEDS THE MODIFICATIONS TO
A. ZERO BIAS DRAIN CURRENT 'IDS'>15mA
B. FORWARD TRANSCONDUCTANCE
(GATE NO. 1 TO DRAIN) 10,000 umhos(MIN)
) 15,000 umhos (MAX)
WHILE THANKING YOU FOR YOUR TIME, WE LOOK FORWARD TO AN EARLY REPLY
IF YOU FEEL THIS IS OUT OF YOUR SCOPE, A RECOMMENDATION TO A SUITABLE
MANUFACTURER/ORGANIZATION WOULD BE APPRECIATED.
REGARDS
Swapan Bose
1-732-238-9848-Phone
1-732-238-9344-Fax
E-mail: swapan_bose@att.net
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