[TenTec] 3N200

[SWAPAN BOSE]

DR. GERALD N. JOHNSON

DEAR SIR,

I WAS READING YOUR ARTICLE ON (TENTEC)40823 MOSFET.

I UNDERSTAND YOU ARE AN AUTHORITY ON MOSFETS AND WOULD APPRECIATE YOUR HELP IN IDENTIFYING A SUITABLE SOURCE FOR THE FOLLOWING. PLEASE REVIEW THE  SAME AND ADVISE ME IF THIS MODIFICATION IS POSSIBLE.

1. 3N200            2500 NOS        (ANY MAKE)
THIS IS A FET SILICON N CHANNEL TRANSISTOR
AND NEEDS THE MODIFICATIONS TO

A. ZERO BIAS DRAIN CURRENT 'IDS'>15mA
B. FORWARD TRANSCONDUCTANCE
(GATE NO. 1 TO DRAIN) 10,000 umhos(MIN)
                                   )  15,000 umhos (MAX)

WHILE THANKING YOU FOR YOUR TIME, WE LOOK FORWARD TO AN EARLY REPLY
IF YOU FEEL THIS IS OUT OF YOUR SCOPE, A RECOMMENDATION TO A SUITABLE 
MANUFACTURER/ORGANIZATION  WOULD BE APPRECIATED.

REGARDS
Swapan Bose
1-732-238-9848-Phone
1-732-238-9344-Fax
E-mail: swapan_bose at att.net