You are right Steve ... What throws me of that there are power sources
(filament & grid)
which are significant some times (200... 400W) and are not tacken in acount
...
In SS, the base/gate power is so small that you can realy ignore them.
However, filaments consumming 400W must recon with as your Power Buget
calculations can be really off ...
I am learning ... I am learning ... :)
Mark
----- Original Message -----
From: "Steve Thompson" <g8gsq@qsl.net>
To: <amps@contesting.com>
Sent: Wednesday, November 13, 2002 8:41 AM
Subject: Re: [Amps] EIMAC Confusion
>
> ----- Original Message -----
> From: mark <mark@sandlabs.com>
> To: <i4jmy@iol.it>
> Cc: amps <amps@contesting.com>
> Sent: 13 November 2002 12:44
> Subject: Re: [Amps] EIMAC Confusion
>
>
> > Thank you all for the replies :)
> > I am a Solid State kind'a guy. There, things are relatively simple.
TOTAL
> > DEVICE DISSIPATION (TDD) is DCV times DCI`. The ratio between TDD and
> OUTPUT
> > POWER (OP) defines the
> > efficency of the device. For example a 100W TDD transistor delivering
50W
> OP
> > is sayd to have
> > a 0.5 (or 50%) efficency.
> In this situation, isn't efficiency rf output divided by dc input?
>
> Max. device dissipation is just that, a maximum limit of (dc input minus
rf
> output).
>
> Where tube specs. refer to anode dissipation, I reckon they are
discounting
> grid and heater/filament power.
>
> Steve
>
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