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Re: [Amps] grounded-gate power MOSFET

To: KD7QAE@ARRL.NET, amps@contesting.com
Subject: Re: [Amps] grounded-gate power MOSFET
From: Radio WC6W <wc6w@juno.com>
Date: Mon, 17 May 2004 16:21:26 -0700
List-post: <mailto:amps@contesting.com>
On Mon, 17 May 2004 01:16:08 +0000 Tomm Aldridge <KD7QAE@ARRL.NET>
writes:
> I have designed and built cascode hybrids made from a HV bipolar and  a

> LV IR MOSFET device.  There work very well.  No reason a FET - FET
should 
> not work as well or better.  It would be imperative to keep the gate to

> source voltage within safe operating limits of course.
> 

Hi Tomm,.
   I'm a bit concerned about what happens at the center point of the
cascode.  Clamping it to the gate bias (15 volts or so) of the top FET
with a hot carrier diode may be a good safety measure.

   One of these days, I'll get around to trying it!

73 & Good evening,
   Marv  WC6W


 <snip>

> >    I've seen cascodes of similar design used for driving CRT's and
other
> > things but, never for RF power.  There may, or may not, be a reason
why
> > not... :-)
> > 
> > 73 & Good morning,
> >    Marv  WC6W  
> > 

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