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Re: [Amps] Tubes, transistors, and 'abuse'

To: amps@contesting.com
Subject: Re: [Amps] Tubes, transistors, and 'abuse'
From: Manfred Mornhinweg <manfred@ludens.cl>
Date: Tue, 25 Apr 2017 19:51:55 +0000
List-post: <amps@contesting.com">mailto:amps@contesting.com>
Steve,

It would also be interesting to get Manfred's views on the Hardrock 50:

https://docs.google.com/viewer?a=v&pid=sites&srcid=ZGVmYXVsdGRvbWFpbnxoYXJkcm9jazUwYmV0YXxneDoxOGMwZTJiMDIzYjZmOWE

Oh boy, I get no rest! :-)

This one uses four RD16HHF1's at 12 volts in a parallel/push-pull arrangement. Similar design for drain DC voltage and RF output.

5 watts in/50 watts out at a slightly lower price than the hfpacker.

Okay. I just had a look at the documentation.

First thing: The RD16HHF1 indeed seems to be the best choice for amplifiers of this kind. It's made for the purpose, designed to work from 12V, has the source at the case, is available, and quite inexpensive. Several weeks ago I placed an order for a few of them, to use as drivers in my own project, but they still haven't arrived (customs processing in Chile takes forever and a day), so I have no hands-on experience with them yet.

Several comments come to mind while looking through the docs:

The output transformer has a 1:4 turns ratio. At the nominal 50W output that means 12.5V RMS across the primary, so that's 6.25V at each drain, or 8.84V peak at each drain. One would think that this is a somewhat poor utilization of the 12-16V supply voltage, resulting in poor efficiency - but I don't know what the actual saturation characteristics of this MOSFET are! Maybe it can't do much better.

Reducing the turns ratio to 1:3 would need 11.8V peak at each drain, which clearly would require more than 12V at the supply. It might be OK with a 14V or higher supply, but not with 12V. So, unless one would want to use a transformer with two primary and seven secondary turns, the 1:4 ratio is a necessary evil. And 7 secondary turns would probably prove unworkable due to delays, leakage, etc.

With the 1:4 trafo, the maximum theoretical efficiency for pure class B operation would be 57.8% at 12V, and only 43.4% at 16V, instead of the theoretical 78.5% for a perfect class B amplifier. Of course when operating in class AB the efficiency will always be lower, and additional imperfections of practical components reduce efficiency even further. So we cannot expect this amplifier to be a model of high efficiency. I would expect 50% at 12V and 38% or so at 16V, on a "good" band, and slightly less on a "bad" one, if the feed arrangement provided perfect drain-drain coupling (which it doesn't).

Instead this amplifier should at least be acceptably linear, given the relatively small voltage excursions at the drains, and the use of some negative feedback.

Since the single turn primary of the output transformer doesn't allow a true center tap, a bifiliar feed choke is required, and is indeed present. The bifiliar feed choke used in this design has a single turn on each side, on a relatively small core having the optimal shape. From the point of view of leakage inductance this is pretty much the best one can do. Only strap winding would be better. But the transistors are placed pretty far apart, introducing significant stray inductance into the drains-choke-bypass-sources circuit. It's hard for me to tell how much, but looking at the board layout and the choke's construction, my educated guess would be around 50nH per side. Given this amp's drain load of only 1.6 ohm per side, a maximum stray reactance of no more than 0.3 ohm or so would be required for good clean functioning of this choke. 50nH has 0.3 ohm reactance at close to 1MHz, and from there up its performance starts falling apart! So I would expect this amplifier to exhibit somewhat recognizable drain-to-drain coupling only on 160 meters, falling apart on the higher bands. From 40 meters up or so the coupled feed arrangement doesn't work, so we are back to the usual problem of these amps, with lower-than-expected efficiency and linearity, and horrible drain voltage waveforms.

A better, very tight board layout would improve this slightly, but there is just no way to get it right on the higher part of the HF spectrum. We have to live with this problem and accept the compromised performance, as we have been doing since solid state broadband HF power amplifiers first started.

The thermal aspects: The specs are 12 to 16V input, 10 to 12A current drain, 50W nominal output. That's a power input between 120 and 192W. After discounting a few watts needed for control circuitry, let's assume 105 to 180W input power to the drains. If in all cases we get 50W output (which is unlikely, it's probably more on low bands and less on high ones), this would equate to an efficiency between 48% and 28%. This seems plausible, with the actual values probably falling closer to the middle of this range. The worst-case dissipation in the four transistors should be 130W, while typical dissipation would be well under 100W, in key-down testing. Let's take the worst case of 130W, which is 32.5W in each transistor.

The RD16HHF1 has an internal thermal resistance of 2.2 K/W and a maximum junction temperature of 150°C. It doesn't need electrical insulation to the heatsink, so the thermal resistance of the interface should be around 0.1 K/W. So the heatsink mounting surface just under each transistor can be allowed to heat up to 75°C while 32.5W of heat are being extracted from each transistor. With the heatsink used in this amplifier, whose data I can only estimate because I don't have its exact specs, brick-on-the-key operation for a sufficiently long time will likely overheat the transistors, while normal ham operation at the usual duty cycles should fall into the green range. If anybody wants to transmit an RTTY bulleting using this amplifier, I would suggest to place a fan on the heatsink. Even running very slowly and quietly at reduced voltage it should prevent overheating.

I don't like the way the designer paralleled the FETs very much. Resistive loading of each gate would have been safer than series inductors. But as stated above, I don't yet have working experience with these particular FETs. Maybe they have enough internal gate damping to remain stable in that circuit.

The single turn per side on the bifiliar feed choke can look suspicious. So I calculated how things are. It turns out that at 1.8MHz and 50W this core operates at 13.4 millitesla flux density (or 134 gauss, for old fashioned people). That's a little higher than usually recommended as rule of thumb, but not terribly so. I would expect this core to run warm, but not excessively hot.

So, overall, I think this amplifier is pretty decent. It does suffer from the usual problems of solid state broadband push-pull linear amplifiers, but that lies in the nature of the thing, not in any specific problems of this particular design. To avoid unnecessary loss and heating, it would be a good idea to operate this amp from the lowest supply voltage that produces normal output and good IMD. Very likely that's much closer to 12V than to 16V, and possibly even a tad lower than 12V.

I didn't look at the control circuitry or the low pass filters. I suppose you all are mostly interested in the amplifier section proper.

Manfred




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