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Re: [Amps] LDMOSFET questions for insiders

Subject: Re: [Amps] LDMOSFET questions for insiders
From: Manfred Mornhinweg <>
Date: Mon, 19 Nov 2018 14:07:42 +0000
List-post: <>

thanks for that link. What I take home from reading it is that I should
expect a somewhat reduced total dissipation capability when avalanching is involved.

But doubts remain as to whether that fully applies to LDMOSFETs used in RF amplifiers, and of course the actual avalanche energy and power ratings of the specific LDMOSFETs I might use.

The paper is specific to VDMOSFETs operating in switched mode with inductive loads. An LDMOSFET might behave differently (I don't know), and in RF amplifier use there can be avalanching while the device is still partially on. I would imagine that this is a particularly critical operating condition, leading to lower avalanching specs than for inductive switching, but I can't find any data on it.

Could it really be that nobody has ever investigated this and published on it?


This app note gives some information on repetitive avalanche ruggedness and unclamped inductive switching which may help...

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