[Amps] Silicon Carbide J-FET

[Baruch Zilbershatz]

They are obviously not targeting the linear market. For linear applications,
limiting these devices at 175 C is absurd, SiC can easily take 250 C
junction temperature before even thinking about increasing the leakages.

Baruch Zilbershatz 
Nitzanay-Oz 118 
Nitzanay -Oz 
42836
ISRAEL 
phone: (+)972-052 8753838


-----Original Message-----
From: amps-bounces at contesting.com [mailto:amps-bounces at contesting.com] On
Behalf Of John Lyles
Sent: Thursday, November 25, 2010 8:46 PM
To: amps at contesting.com
Subject: [Amps] Silicon Carbide J-FET

I don't know if its similar, but we have some special SiC SITs (static 
induction fets) from Microsemi that are capable of 1600 watts a piece 
(not push pull) with about 120 volts Vdd. This is, mind you, in pulsed 
mode (20% duty) tuned at 200 MHz. We tested their original parts at 800 
watts peak, with 100 volts of bias. They were just like tubes in that 
they needed a negative bias to cut them off, then a less negative to 
make them conduct. Unfortunately, loss of bias (such as a loose 
connection) would cause them to burnout if special protection was not 
added. These are not as high a gain as LDMOS, since they are configured 
in common gate (like grounded grid!). I'd be curious to hear more about 
the SemiSouth parts.
John
K5PRO


  Message: 8
> Date: Thu, 25 Nov 2010 20:47:13 +0800
> From: "Hsu"<hsu4qro at gmail.com>
> Subject: [Amps] Silicon Carbide J-FET
> To:<amps at contesting.com>
> Message-ID:<B73524FC99204CE7BB5A5CD5CBADEDB5 at PC201007302303>
> Content-Type: text/plain;	charset="iso-8859-1"
>
> I just download some  SemiSouth's  Silicon Carbide power J-FET datasheet,I
found these FET's shoud with very good frequency response, anyone use it
build RF amplifier or antenna switch?
>        73!Hsu
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