[Amps] LDMOS and DMOS RF MOSFETs

[Thomas Walsh]

Yes there is and that would be the 8877 or otherwise known as
3cx1500a7. It can run from 300-1500 all day with nothing more
then some forced air, not water mind you, and depending on the
capabilities of your ps, can go as high as 2kw out for a long time.
It can handle any mode including cw with drive powers below 50w in...If we always try to redesign the wheel we will get nowhere.


Sent from my iPad

> On May 4, 2017, at 02:23, Roger (K8RI) <k8ri at rogerhalstead.com> wrote:
> 
> I was under the impression that Si based transistors would handle higher temperatures than GaN.
> 
> Is there something that will handle more than 300 W output that isn't pulsed and can handle CW and SSB in a linear mode?
> That something needs to be cost efficient enough not to require a second mortgage.
> 
> 73, Roger (K8RI)
> 
> 
>> On 5/4/2017 3:24 AM, John Lyles wrote:
>> This was on line, dated 2014. An interesting perspective on LDMOS and plain DMOS transistors.
>> 73
>> John
>> K5PRO
>> ----------
>> Reports of the Death of DMOS RF MOSFETs are Greatly Exaggerated
>> by Mark Vitellaro, Director of Strategic Marketing, Richardson RFPD
>> 
>> 
>> The landscape of the RF power transistor market has recently changed due primarily to three developments: the emergence of GaN, the maturation of the LDMOS process, and the slowdown in the growth of the wireless infrastructure market. The performance attributes of GaN are well known. The technology offers a highly-valued combination of improved power density, high gain, high frequency, wide bandwidth, and high efficiency. Another interesting aspect of the emergence of GaN has been the appearance of multiple independent GaN fabs, which has opened up opportunities for several RF transistor companies that were previously unable to develop their own competitive LDMOS strategy. While there is certainly time for the GaN market to consolidate, there seems to be enough diversification in product development to support several players in the medium term. It just so happens that the timing of the GaN awakening has occurred as LDMOS is facing challenges from a maturing process, as well as the shrinking of the wireless infrastructure market. Now dominated by Freescale, NXP and Infineon, LDMOS is on its 9th generation, providing diminishing marginal returns from future process enhancements. Furthermore, the push for higher efficiency, digital baseband with digital predistortion and small cells in the wireless market have reduced the LDMOS dollars per amplifier.
>> The combination of these forces has driven LDMOS suppliers to look elsewhere for growth, and the largest area of interest has been the industrial, scientific, and medical (ISM) market. This market is f