measures wrote:
> >Does this caution mean that I have to stop my recreational practice of
> >drilling through power transistors?
> >
> Ordinary power transistors have no toxic substances lurking about inside.
> If you want to meet Jesus sooner rather than later, try drilling through
> RF power transistors.
Rich, you shouldn't be so strong on your statements, the recreational
fellow might actually believe you!:
"Silicon-carbide reinforced aluminum (Al/SiC) metal-matrix composites
(MMCs) used in combination with DBC beryllia substrates has been
successfully incorporated in the design of high-current IGBT module
baseplates.9 The Al/SiC MMC combines the high heat dissipation and low
density of aluminum alloys with a low coefficient of thermal expansion
matched to that of the beryllia substrates. The result is reduced
thermal stresses at the substrate-to-baseplate solder joint compared to
modules using metallic baseplates."
The Independant Gate Bipolar Transistor is typically a power device
controlled directly by logic circuitry, and poineered, I think, by
Phillips/Siemens.
Visit the site for more info:
http://www.eocenter.com/edtn/
Further invective masterpieces from this site:
"No adverse effects to human health or the environment are known to be
associated with the use or disposal of devices containing beryllia. The
USEPA considers beryllia a non-hazardous waste when it is disposed.
Clean beryllia segregated from devices can be recycled by the primary
producer. Where segregation is not economical, devices and systems
containing beryllia can generally be disposed in a conventional
solid-waste landfill." sic
> As to the danger of BeO dust. A friend of mine saw a lab demo involving
> rats. In a
> couple of minutes, they were QRT.
Afraid your rats must have died of alcohol poisoning.
Ian, ZS6BTE
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